18.6 Poly Solar Cell for Poly 270W Solar Module
Produktbeschreibung
Features:
1.High conversion efficiency resulting in superior power output performance.
2.Outstanding power output even in low light or high temperature conditions
3.Optimized design for ease of soldering and lamination
4.Long-term stability,reliability and performance
5.Output power tolerance of +/-3%
Physical characteristics:
Dimension:156*156mm±0.5mm
Thickness:Wafer(si):200μm±20μm
Cell:240μm±40μm
Front:Silver bus bars;Dark blue/others silicon nitride anti reflection coating
Back:Silver/aluminum bus bars;Full-surface aluminum BSF
Temperature Coefficients,
TkVoltage:-0.348%/K;
TkCurrent:+0.031%/K
TkPower:-0.46%/K
Data under standard testing conditions(STC):1000W/Sq.M, AM1.5, 25ºC
| No. | Ef ciency(%) | Pmpp(W) | Umpp(V) | Impp(A) | Uoc(V) | Isc(A) | FF(%) |
| 12 | 18.50-19.00 | 4.5 | 0.541 | 8.321 | 0.643 | 8.857 | 79.05 |
| 11 | 18.40-18.50 | 4.48 | 0.54 | 8.293 | 0.642 | 8.831 | 78.97 |
| 10 | 18.30-18.40 | 4.46 | 0.539 | 8.274 | 0.641 | 8.811 | 78.92 |
| 9 | 18.20-18.30 | 4.43 | 0.537 | 8.242 | 0.64 | 8.778 | 78.87 |
| 8 | 18.10-18.20 | 4.41 | 0.536 | 8.221 | 0.638 | 8.757 | 78.82 |
| 7 | 18.00-18.10 | 4.38 | 0.535 | 8.193 | 0.637 | 8.73 | 78.75 |
| 6 | 17.90-18.00 | 4.36 | 0.533 | 8.171 | 0.636 | 8.71 | 78.67 |
| 5 | 17.80-17.90 | 4.33 | 0.532 | 8.149 | 0.635 | 8.691 | 78.57 |
| 4 | 17.70-17.80 | 4.31 | 0.53 | 8.128 | 0.633 | 8.672 | 78.47 |
| 3 | 17.60-17.70 | 4.29 | 0.529 | 8.106 | 0.632 | 8.65 | 78.4 |
| 2 | 17.50-17.60 | 4.26 | 0.527 | 8.079 | 0.631 | 8.626 | 78.3 |
| 1 | 17.40-17.50 | 4.24 | 0.526 | 8.053 | 0.629 | 8.601 | 78.25 |
Solar Cell Production Line
Cleaning & Texturing: Wafers are cleaned with industrial soaps and form square-based pyramids also called texture. The texturization helps to reduce the reflection of sunlight.
Diffusion: Wafers that have been pre-droped with boron during the casting process are then given a negative(n-type) surface characteristic by diffusing them with a phosphorus source at high temperature, which in turn creats the negative/positive(n-p) junction.
Etching: Phosphorus diffuses not only into the desired wafer surface but also into the side and the opposite surface to form PN. This gives a shunt path between the cell front and rear. Removal of the path around the wafer edge/edge junction isolation is named etching.
PECVD: By PECVD equipment, the wafers are coated with anti-reflection coating(ARC). It's the blue silicion nitride film to reduce reflection and promote absorption of light.
Printing & Heating: it was adopted by printing paste with screen technology to print the electrodes of silicion solar, and form a good ohmic contact.
Testing & Sorting: It means classifying the cells according to their efficiency tested under the simulated sunlight.
Lieferfähigkeit
Verpackung und Versand
- Vorlaufzeit:
- Hafen:
- Verpackungsdetails:
Produktspezifikationen
- Type:
- Poly